SI1315DL-T1-GE3 datasheet

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О ДАТАШИТЕ

• Маркировка
  SI1315DL-T1-GE3
• Производитель
  Siliconix
• Описание
  Vishay Intertechnology SI1315DL-T1-GE3 Current - Continuous Drain (id) @ 25?° C: 900mA Drain To Source Voltage (vdss): 8V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V Input Capacitance (ciss) @ Vds: 112pF @ 4V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Power - Max: 400mW Rds On (max) @ Id, Vgs: 336 mOhm @ 800mA, 4.5V Series: TrenchFET?® Vgs(th) (max) @ Id: 800mV @ 250?µA Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 8 V Gate-Source Breakdown Voltage: 8 V Continuous Drain Current: - 0.9 A Resistance Drain-Source RDS (on): 0.5 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 8 ns Forward Transconductance gFS (Max / Min): 3 S Gate Charge Qg: 1.7 nC Minimum Operating Temperature: - 55 C Power Dissipation: 0.4 W Rise Time: 15 ns Typical Turn-Off Delay Time: 14 ns Part # Aliases: SI1315DL-GE3
• Количество страниц
  11 шт.
• Форматы файла
  HTML, PDF

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